| Primary Function | Limits short-duration overvoltage transients by diverting surge current away from protected circuitry. | A TVS diode acts as a fast shunt protection device rather than a voltage regulator for continuous overvoltage. |
| Normal Operating State | Very high impedance below the specified reverse working voltage, with only a small leakage current. | The protected circuit normally operates without significant current flowing through the TVS diode. |
| Voltage Trigger Point | The diode begins entering avalanche conduction when the transient voltage rises above its breakdown region. | Avalanche conduction causes the TVS diode to provide a low-impedance path for the excess surge current. |
| Response Time | Typically in the sub-nanosecond to low-nanosecond range for the semiconductor junction; the complete circuit response also depends on layout and parasitic inductance. | Short, low-inductance connections are essential because PCB trace inductance can increase the voltage seen by the protected load. |
| Reverse Working Voltage (VRWM) | The maximum continuous reverse voltage that can be applied without causing significant avalanche conduction. Common design values range from about 3 V to more than 100 V, depending on the application. | VRWM should be higher than the highest normal steady-state voltage, including supply tolerance and expected operating variation. |
| Breakdown Voltage (VBR) | The voltage range at which a specified test current flows through the diode. It is higher than VRWM. | VBR indicates when the protection device starts to conduct substantially, but it is not the final clamping voltage. |
| Clamping Voltage (VC) | The maximum voltage measured across the TVS during a specified surge current and waveform. Typical values may be approximately 1.3 to 2 times VRWM, depending on device design and test conditions. | VC is the key value used to verify that the protected component can withstand the remaining transient voltage. |
| Peak Pulse Current (IPP) | The maximum rated surge current for a specified pulse waveform, commonly the 10/1000 µs waveform for power transient ratings. | The TVS must be selected so its IPP rating is equal to or greater than the expected surge current under the relevant waveform. |
| Peak Pulse Power (PPP) | The maximum transient power rating, calculated approximately as PPP = VC × IPP for the specified test conditions. | Power ratings are pulse-dependent; a device rated for a particular surge waveform may not withstand the same power for a longer or different pulse. |
| Typical Pulse Ratings | Small signal and data-line parts may be rated from tens to hundreds of watts, while larger discrete TVS devices may be rated from several hundred watts to several kilowatts for short pulses. | The correct rating depends on surge source, pulse duration, repetition rate, thermal conditions, and package construction. |
| Unidirectional Configuration | Provides avalanche protection in the reverse direction and behaves similarly to a conventional diode in the forward direction. | Often used on DC power rails and circuits where the signal polarity is known. |
| Bidirectional Configuration | Provides similar clamping behavior for positive and negative transients. | Commonly used on differential, alternating-current, and communication lines where both voltage polarities must be protected. |
| Leakage Current | Usually specified at VRWM; values range from nanoamps or microamps for low-leakage signal protectors to higher levels for high-power devices. | Low leakage is important for battery-powered systems, precision analog inputs, and high-impedance signal lines. |
| Junction Capacitance | Can range from less than 1 pF for high-speed data protection to hundreds or thousands of pF for larger power devices. | Lower capacitance reduces signal distortion and is preferred for high-speed interfaces. |
| Energy Absorption Mechanism | The avalanche junction converts part of the transient electrical energy into heat during the pulse. | The device must have sufficient pulse-energy and thermal capability to avoid damage or excessive temperature rise. |
| Common Surge Sources | Electrostatic discharge, inductive switching, cable transients, load-dump events, lightning-induced surges, and power-supply disturbances. | The surge type determines the required clamping level, current rating, pulse duration, and protection topology. |
| Protection Placement | Place the TVS close to the connector or surge entry point, with a short and wide path to the return or ground plane. | Good placement minimizes parasitic inductance and prevents transient current from passing through sensitive circuit areas. |
| Selection Rule | Choose a device with VRWM above the normal maximum voltage, VC below the protected circuit's maximum withstand voltage, and adequate IPP and PPP ratings. | A device with an unnecessarily low VRWM may conduct during normal operation, while an excessive VC may fail to protect the load. |
| Important Limitation | A TVS diode is primarily intended for transient protection and should not be used as the sole protection against sustained overvoltage or repeated high-energy faults. | Fuses, current limiters, regulators, transient filters, or other protective stages may be required for complete system-level protection. |